Posted by on August 03, 19102 at 07:16:17:
Name :Hamdy Mohamed Abd El Hamid
Date of birth :9/12/1970
Place of birth :Menofia, Egypt
Nationality :Egyptian
Country of permanent residence :Egypt
Present position Assistant Lecturer(مدرس مساعد) Higher Technological Institute, 10th of Ramadan City, Egypt.
Previous position 1- Maintenance Engineer at TOSHIBA factory
2-Instractor (معيد) – Ain Shams University- Fac. of Engineering. And Higher Technological Institute, 10th of Ramadan City, Egypt.
Present mailing address Department of Electrical Engineering and Computer Science, Higher Technological Institute. P.O. Box 228, Tenth of Ramadan City, Egypt
Email: hamdy_m_a@Yahoo.com
Business Telephone :(002) 015-369498 and (002)-015-364168 Home telephone :(002) 010-1467635
Specialty :Computer & communication Engineering
EDUCATIONS
M.Sc(ماجستير ) 2000 May.
Ain Shams University, Faculty of Engineering Dpt. of Electronics and Communications Engineering, Cairo, Egypt.
B.Sc(بكالوريوس) 1994 May (Very good with honor)
Department of Electronics and Communications
EMPLOYMENT HISTORY
Maintenance Engineer 1994/95 TOSHIBA of Radio, and Television Fabrication, Benha, Egypt.
Instructor 1996/99 Instructor- Higher Technological Institute, 10th of Ramadan City, Egypt.
Research Engineer 1996/2000 Ain Shams University, Faculty of Engineering Dpt. of Electronics and Communications Engineering, Cairo, Egypt.
Assistant Lecturer 2000/present Higher Technological Institute, 10th of Ramadan City, Egypt.
PROFESSIONAL ACTIVITIES AND WORK EXPERIENCE
1) Training
Oct. 1989 BTM of clothes, Tenth of Ramadan City, Egypt.
Oct., 1990 El-Shrief of glass, and lamps, Tenth of Ramadan City, Egypt.
Oct. 1991 TOSHIBA of Radio, and Television Fabrication, Benha, Egypt.
Jun., 1999 Faculty of engineering, Ain Shams University, Department of electronics and communication.
May, 1999 Mentor Graphics (Design of a Digital System on a Chip)
May,2000 Mentor Graphics (Design of a Digital System on a Chip)
Using Renoir tools, Model sim, Leonardo (VLSI)
2) Skills
1) Design of a Digital System on a Chip :VHDL (Using Model-SIM)
2) Design, analysis, and maintance of electronic cards (digital/analog)
3) Maintenance of Electronic Circuit: Analog and Digital.
4) Good knowledge of Optical Fiber Communication Engineering.
5) Computer Aided Circuit Designer and Characterization of VLSI circuits and systems.
6) Maintenance of Electronic Instrumentation.
7) PLC programmer
Computer Skills
a- Data Base Programming: SQL/PL_SQL, VBASIC and MS Access
b-Programming Languages: VBASIC, PASCAL,VC, FORTRANT,
c-Applications: Web Design using : HTML, FRONT PAGE, and Flash5
d-MS-office and the most of windows applications.
MEMBERSHIP OF SCIENTIFIC
EES, Egyptian Engineers Society, Egypt.
LANGUAGE AND DEGREE OF PROFICIENCY
1) English Writing and Speaking Fluently.
2) French Writing,
2) Deutsche Writing,
Besides the original language (Arabic)
Msc thesthis history
Hamdy Mohamed Abd El Hameed-M.Sc- Modeling and simulation of A New Graded Band Gap Channel MOSFET for GHz applications, Electronics and Communications Dept., Faculty of Eng., Ain Shams University,2000.
In this thesis we suggested a new MOSFET device that is realized by using the known MOSFET technology with a Graded Band Gap channel (GBGC) in the longitudinal direction from the source to drain with the greater band gap at the source side and the smaller one at the drain side. This graded band gap can be achieved by implanting atoms of a material which has a smaller band gap energy than silicon like Ge. The fractional ratio of the implanted atoms increases with the position x towards the drain. This architectural feature of the graded energy band along the channel has the following advantages; i) inducing an internal electric field that accelerates the electrons faster from the source to the drain. ii) reduction of the potential barrier of the source-channel junction, and iii) overcoming most mobility degradation mechanisms. The previous reasons make it possible to have a GBGC MOSFET that is faster and has a higher cut-off frequency than normal MOSFET.
Moreover the GBGC structure improves the noise figure, decreases the high resistance hot zone which often exits besides the drain due to a high conductivity beside the drain region and consequently; suppresses the possibility of thermal and carrier heating and hence the probability of bulk and/or surface breakdown. A new circuit technique has been introduced to simulate the GBGC MOSFET using SPICE.
Key Words : GBGC MOSFET- Drain current- Noise Figure- SPICE.
PUBLICATIONS
1- Hamdy abd elhameed, Adel elhennawy,”Design and Investigation of a new MOSFET floating leads diode operated in the exponential mode”, Fifteen National radio science conference”,1998
2- Hamdy abd elhameed, Adel elhennawy,”Design and Investigation of a very wide dynamic microwave electronic counter entirely using tradional MOSFET”, National Radio Science Committee,Inetnational Union Department, 1998.
3- Hamdy abd elhameed, Adel elhennawy,”study and modeling of a new MOSFET device for precision detection of a microwave signal polarization”, Fifteen National radio science conference”,1998
4- Hamdy abd elhameed, and Ali abulNoor,”A new Graded Band Gap Channel MOSFET for Low Noise and GHZ applications”, Terahertz and Gigahertz Electronics and photonicsII, proceedings of SPIE Vol.4111, 2000,USA.